正弦平方势与一维掺杂超晶格的能带结构  

The Sine-squared Potential and the Band Constraction for 1-dimension Doping Superlattice

作　　者：吴燕玲[1] 罗晓华[2] 邵明珠[3] 罗诗裕[3] 

机构地区：[1]东莞理工学院城市学院,广东东莞523106 [2]重庆大学电气工程学院,重庆400044 [3]东莞理工学院电子工程系,广东东莞523106

出　　处：《半导体光电》2009年第1期84-86,共3页Semiconductor Optoelectronics

摘　　要：引入正弦平方势,在量子力学的框架内,把电子在掺杂超晶格中运动的Schrodinger方程化为Mathieu方程,根据Bloch定理讨论了系统能量分布,并用摄动法求解了方程的低阶不稳定区及其禁带宽度,系统自动呈现出了能带结构,再现了带电粒子同掺杂超晶格相互作用的周期性特征。同时,由于不稳定区的宽度与粒子质量、势阱宽度和深度有关,只需适当调节这些参数,就可以调节带隙宽度,从而改变材料的光电性质。In a quantum mechanic frame the equation described a paticle motion in the doping superlattice well is reduced to Mathieu equation by using the sine-squared potential; the band constraction in this system is discussed based on Bloch theorem;the instabilities zone （stop- band）width are found by the perturbation techniques, the system presented automatically band constraction. The periodicity of the doping superlattice is reveled. At the same time, due to the gap width is related to the particle mass.the width and the deep of the well, only regulated these parameters,the gap width of the superlattice quantum well can be regulated, thus the photoelectric property of the material may be changed.

关 键 词：掺杂超晶格 能带结构 正弦平方势 摄动法 

分 类 号：O471.5[理学—半导体物理]