半导体生产用剧毒气体解毒技术的研究  

Study on The Detoxification Techniques of Highly Toxic Gases For The Production of Semiconductor

作　　者：孙福楠[1] 吴江红[1] 柳蔚[1] 李英辉[1] 于大秋[1] 冯庆祥[1] 

机构地区：[1]光明化工研究设计院,辽宁大连116031

出　　处：《低温与特气》2009年第1期1-3,共3页Low Temperature and Specialty Gases

摘　　要：在半导体制造过程中,需要使用大量有毒性气体,如SiH4、B2H6、Si2H6、GeH4、PH3、CH3Br、H2S、H2Se、AsH3等。这些气体易燃、易爆、有毒,对人身及环境有危害性,为了确保IC等新型半导体材料产业顺利发展,开展气体解毒研究意义重大。传统上采用酸、碱、氧化剂的湿法工艺,存在许多弊病,近年来,剧毒气体干法解毒技术发展迅猛。本文介绍了该技术的原理,希望国产解毒装置能适应IC发展需求。Lots of toxic gases such as Sill4 ,B2H6 ,Si2H6 ,GeH4 ,PH3 ,CH3Br,H2S,H2Se,AsH3 should be used in the production of semiconductor. These gases are inflammable and explosive, which are harmful to the person and environment. In order to ensure the smooth development of new type semiconductotr materials, studying on the detoxifieation techniques for gases is significant. Wet processes which used acid,alkali and oxidizing agent had lots disadvantages,in recently ,detoxification techniques by pyrolysis for toxic gases developed rapidly. The principle of this kind of technology was introduced , we hope the detoxifcation device made in China could meet the needs of the development of IC.

关 键 词：半导体 剧毒有害气体 SIH4 B2H6 GeH4 PH3 AsH3 干法解毒 

分 类 号：X705[环境科学与工程—环境工程]