Si衬底上Ge材料的UHVCVD生长  

Growth of Ge on Silicon by Ultrahigh Vacuum Chemical Vapor Deposition

作　　者：成步文[1] 薛春来[1] 罗丽萍[1] 韩根全[1] 曾玉刚[1] 薛海韵[1] 王启明[1] 

机构地区：[1]中国科学院半导体研究所,集成光电子学国家重点联合实验室,北京100083

出　　处：《材料科学与工程学报》2009年第1期118-120,共3页Journal of Materials Science and Engineering

基　　金："973"基金资助项目(2007CB613404);国家自然科学基金资助项目(60676005);"863计划"基金资助项目(2006AA03Z415)

摘　　要：采用超低温Buffer层技术在Si衬底上生长出了质量优良的厚Ge材料,材料的穿透位错密度为1×105cm-2。原子力显微镜测试表明表面均方根粗糙度为0.33nm,卢瑟福背散射谱表明Ge的沟道产额低达3.9%,透射电镜分析则表明应变的弛豫主要是通过在Si与Ge的界面处形成失配位错来实现的。High quality Ge with a threading dislocation density of - 1 × 10^5cm^-2 was grown on Si with a low temperature Ge buffer layer. The root-mean-square surface roughness of Ge film was 0.33nm. According to channeling and random Rutherford backscattering spectrometry spectra, a Хmin value of 3. 9% was found. The relaxation was realized by forming mismatch dislocation at the interface between Ge film and the Si substrate.

关 键 词：硅基 Ge 外延 

分 类 号：O782[理学—晶体学]