纳米硅微晶对于Er离子掺杂的SiO2薄膜的光致发光和电致发光的不同影响  

Different Effect of Nanocrystals on the Electroluminescence and Photoluminescence in Er-doped SiO_2 Films

作　　者：张俊杰[1] 孙甲明[1] 杨阳[1] 张新霞[1] 刘海旭[1] W.Skorupa M.Helm 

机构地区：[1]南开大学物理学院,弱光非线性光子学教育部重点实验室(南开大学),天津300071 [2]Institute of Ion Beam Physics and Materials Research,Forschungszentrum Dresden Rossendorf, P. O. Box 510119,Dresden D-01314,Germany

出　　处：《材料科学与工程学报》2009年第1期135-138,共4页Journal of Materials Science and Engineering

基　　金：“973计划”资助项目(2007CB613403);国家自然科学基金资助项目(60776036);教育部新世纪人才项目(NCET-07-0459)

摘　　要：本文利用Er和硅离子共注入热氧化SiO2薄膜的方法制备出Er离子掺杂的含纳米硅微晶的SiO2发光薄膜,在此基础上制备出ITO/SiON/Si-rich SiO2:Er/Si MOS结构电致发光器件,比较研究了硅微晶密度的变化对于MOS结构的电致发光和光致发光特性的影响。随着纳米硅微晶的增多,Er离子在1.54μm处的红外光致发光显著增强,显示出纳米硅微晶对Er离子光致发光的敏化作用。相反,对于电致发光来说,增加纳米硅微晶数量的同时也增加了SiO2薄膜中的电子俘获陷阱,电子在纳米硅微晶之间的隧穿降低了过热电子的数量和平均能量,因而降低了碰撞激发Er离子产生的电致发光效率。Er-doped SiO2 films containing silicon nanocrystals were prepared by the Er and Si co-implantation into thermally oxidized SiO2 films. Electroluminescence was studied with a metal-oxide-semiconductor structure of indium-tinoxide/SiON/Si-rich SiO2 ： Er/Si. The different effect of silicon nanocrystal concentration was studied on the mechanisms of electroluminescence and photoluminescence. The 1.54μm PL peak of Er^3＋ in the infrared region dramatically increased with increasing the density of silicon nanocrystals under photoluminescence excitation, which indicated that silicon nanocrystals play an important role in the sensitization in the photoluminescence excitation. Contrary to PL, due to the electron tunneling between silicon nanocrystals and the electron trapping at the surface of silicon nanocrstals, the average energy and the population of hot electrons decreased in the electroluminescence excitation, thus the EL efficiency of Er^3＋ decreased dramatically with the increase of silicon nanocrystals.

关 键 词：铒 电致发光 光致发光 二氧化硅 纳米硅 

分 类 号：O472.3[理学—半导体物理] O482.3[理学—物理]