CuO/SiO_2复合薄膜的微观结构和发光特性分析  

Analysis to Microstructure and Photo-Luminescent Properties of CuO/SiO_2 Composite Thin Films

作　　者：石锋[1] 李玉国[1] 孙钦军[1] 

机构地区：[1]山东师范大学物理与电子科学学院,济南250014

出　　处：《无机材料学报》2009年第2期234-238,共5页Journal of Inorganic Materials

摘　　要：采用射频磁控共溅射法在硅衬底上沉积Cu/SiO2复合薄膜,然后在N2保护下高温退火,再于空气中自然冷却氧化,制备出低维CuO纳米结构,并对其微观结构和光致发光进行研究.退火温度为1100℃时样品中主晶相为立方晶系的CuO(200)晶面,薄膜样品表面出现纳米线状结构,表面组分主要包括Cu、O元素,冷却氧化形成CuO/SiO2复合薄膜.该温度下退火后,光致发光谱中出现紫外光和紫光,这是由于复合薄膜中CuO的导带底到Cu空穴缺陷能级的跃迁导致的.Cu/SiO2 composite thin films were deposited on n-type Si （ 111 ） substrates by radio frequency （RF） magnetron co-sputtering method, annealed at high temperature in N2 atmosphere, then cooling and oxidation in the air to fabricate low-dimensionality CuO nano-structure. The micro-structure and photo- luminescent properties were studied. The main phase of sample is cubic CuO（200） crystal face and sample forms nano-line structure with Cu, O elements as the main components to form CuO/SiO2 composite thin film in the sample surface after annealing at 1100℃. The ultraviolet light and purple-light appear in photoluminescence （PL） spectra, which is abscribed to the electron transition from the defect level, resulting from the Cu vacancies to the conductor band of CuO composite thin films.

关 键 词：射频磁控共溅射法 CuO/SiO2复合薄膜 微观结构 光致发光特性 

分 类 号：O484[理学—固体物理]