高介电HfOxNy薄膜的制备及其光学性能研究  

Preparation and optical properties of high-k dielectric HfO_xN_y thin films

作　　者：王莹[1] 张丽明[1] 杨更须[2] 

机构地区：[1]商丘职业技术学院,河南商丘476000 [2]河南大学化学化工学院,河南开封475001

出　　处：《应用化工》2009年第2期216-218,共3页Applied Chemical Industry

摘　　要：采用直流反应磁控溅射方法,在硅衬底制备了高介电HfOxNy薄膜。用椭偏仪研究了后期退火处理对薄膜光学性质的影响,结果表明,薄膜的折射率随退火温度的升高而增加,这主要是由于高温退火导致薄膜内部缺陷减少,使得薄膜松散的内部结构变得更加致密;薄膜的消光系数随退火温度的升高而降低,这是由于因为退火后薄膜内的缺陷减少。光学禁带宽度随退火温度的升高而增加,这是由于退火过程中薄膜中N含量的减少而导致。The high-k dielectric HfOxNy films were prepared by rf reactive sputtering in oxygen and nitrogen ambient. The spectroscopic ellipsometry was used to investigate the optical properties of HfOxNy films. It was found that the refractive index of the film increased with the increasing annealing temperatures, whereas the extinction coefficient decreased with the increase of annealing temperature. That is because high temperature annealing lead to the increase of packing density and reduction of defects in the films. The optical band gap was found to increase at higher annealing temperature,which is due to the decrease of N content in the films upon high temperature annealing

关 键 词：HfOxNy 薄膜 直流反应磁控溅射 椭偏仪 光学特性 

分 类 号：O484[理学—固体物理]