中频磁控溅射制备AlN薄膜  

AlN films deposited by middle-frequency magnetron sputtering

作　　者：任克飞[1] 阴明利[1] 邹长伟[1] 付德君[1] 

机构地区：[1]武汉大学加速器实验室,武汉430072

出　　处：《核技术》2009年第3期169-172,共4页Nuclear Techniques

基　　金：国家自然科学基金(10675095;10875091)资助

摘　　要：设计了一套阳极层离子源辅助中频磁控溅射装置,并在Si(111)衬底上沉积AlN薄膜。用X射线衍射、原子力显微镜和扫描电镜分析了AlN薄膜的结构、形貌和成分。在优化的实验条件下制备的AlN薄膜具有较强的(002)衍射峰,其半高宽为612–648弧秒。气体流量、衬底偏压、离子源等对薄膜结构有明显影响。A middle-frequency magnetron sputtering with anode-layer ion source assistance was designed and AIN films were deposited on Si（111） substrates by using this system. The structure and composition of the films were characterized by X-ray diffraction, atomic force microscopy and scanning electron microscopy. The .films deposited under optimal conditions have strong diffraction of AIN （002） and the FWHM of （002） peaks from different film samples ranges of 612- 648 arcsec. Gas flow rate, the substrate bias and the application of anode-layer ion source are of obvious influence to the AIN film structure.

关 键 词：中频磁控溅射 ALN 阳极层离子源 

分 类 号：O484.1[理学—固体物理] O47[理学—物理]