基于I-V特性的阻变存储器的阻变机制研究  

Resistive Switching Mechanisms for Nonvolatile Resistive Random Access Memory Based on I-V Characteristic

作　　者：李颖弢[1,2] 刘明[1] 龙世兵[1] 刘琦[1,3] 张森[1] 王艳[1,2] 左青云[1] 王琴[1] 胡媛[1] 刘肃[2] 

机构地区：[1]中国科学院微电子研究所纳米加工与新器件集成技术实验室,北京100029 [2]兰州大学物理科学与技术学院微电子研究所,兰州730000 [3]安徽大学电子科学与技术学院,合肥230039

出　　处：《微纳电子技术》2009年第3期134-140,153,共8页Micronanoelectronic Technology

基　　金：国家高技术研究发展计划(863计划)资助项目(2008AA031403);国家重点基础研究发展计划(973计划)资助项目(2006CB302706);国家自然科学基金资助项目(60825403,90607022,60506005)

摘　　要：随着器件尺寸的缩小,阻变存储器(RRAM)具有取代现有主流Flash存储器成为下一代新型存储器的潜力。但对RRAM器件电阻转变机制的研究在认识上依然存在很大的分歧,直接制约了RRAM的研发与应用。通过介绍阻变存储器的基本工作原理、不同的阻变机制以及基于阻变存储器所表现出的不同I-V特性,研究了器件的阻变特性;详细分析了阻变存储器的五种阻变物理机制,即导电细丝(filament)、空间电荷限制电流效应(SCLC)、缺陷能级的电荷俘获和释放、肖特基发射效应(Schottky emission)以及普尔-法兰克效应(Pool-Frenkel);同时,对RRAM器件的研究发展趋势以及面临的挑战进行了展望。With the conventional memories approaching their scaling limits in recent years, the nonvolatile resistive random access memory （RRAM） device is considered as one of the promising candidates of next-generation memories for possibly replacing the flash memory. However, the detailed switching mechanisms are not yet clearly understood, which is a direct constraint for the application of RRAM. Therefore, an overview of RRAM devices is presented, including the development status, basic operation principle and resistive switching mechanisms. Based on different I-V characteristics, these mechanisms are mainly divided into conduction filament, space charge limited conduction, trap charging and discharging, Schottky emission and Pool-Frenkel emission. Meanwhile, the future research directions and challenges of RRAM memories are analysed.

关 键 词：阻变存储器 非挥发性存储器 I-V特性 阻变机制 工作原理 

分 类 号：TN304.21[电子电信—物理电子学] TP333.8[自动化与计算机技术—计算机系统结构]