Si基发光的研究进展  

Research Progress on the Silicon Based Light Emitting

作　　者：刘伟[1] 牛萍娟[1] 李晓云[1] 郭维廉[1,2] 

机构地区：[1]天津工业大学信息与通信工程学院,天津300160 [2]天津大学电子信息工程学院,天津300072

出　　处：《微纳电子技术》2009年第3期154-159,共6页Micronanoelectronic Technology

基　　金：国家自然科学基金资助项目(NSFC60706015)

摘　　要：回顾了Si基发光的研究历程,归纳分析了新近几种实现Si发光的方法和其优缺点,其中包括多孔Si发光、GeSi/Si量子阱发光、Sip-n结位错发光、CMOSSi基发光、PERL结构Si基发光等方法。重点介绍了PERL结构Si基发光,分析了结构设计中的几个关键性因素。该结构利用了光电转换可逆性原理,基于普通的单光子和双光子辅助次禁带弱光发射过程,通过把位于有关的次禁带波长的吸收最小化,同时减少二极管内寄生无辐射复合的作用范围。期望通过该综述提高国内研究者对PERLSi基发光的重视,开拓以PERL为新思路、新方法的Si基光互连方向研究的新进展。The various approaches in the silicon based light emitting are reviewed. The advantages and disadvantages of new approaches in the silicon luminescence are introduced, including porous silicon emission, GeSi/Si quantum well emission, silicon p-n junction dislocation emission, CMOS silicon based luminescence, passivated emitter and rear locally-defused （PERL） silicon based light emitting etc. Several key factors in PERL Si-based LED structure design are introduced particularly. PERL Si-based LEDs are based on normally weak one-and two-phonon assisted sub-bandgap light-emission process, and take advantage of the reciprocity between light absorption and emission by maximizing absorption at relevant sub-bandgap wavelengths while reducing the scope for parasitic nonradiative recombination within the diodes. Besides combining with the Si-based CMOS IC, an improvement scheme of PERL Si-based LED structures is advised.

关 键 词：硅基发光 光互连 互补金属氧化物半导体 光陷阱 电光转换效率 

分 类 号：TN304.12[电子电信—物理电子学] TN256