从特征尺寸的缩小看光刻技术的发展  

Trends of Lithography Technology Based on Decreasing of the Feature Size

作　　者：孙磊[1] 戴庆元[1] 乔高帅[1] 吴日新[1] 

机构地区：[1]上海交通大学微纳科学技术研究院,上海200240

出　　处：《微纳电子技术》2009年第3期186-190,共5页Micronanoelectronic Technology

摘　　要：从特征尺寸不断缩小变化的角度阐述了近代光刻技术发展的历程。指出90nm节点的主流光刻技术是193nmArF光刻;193nm浸入式光刻技术作为65nm和45nm节点的首选光刻技术,如果配合二次曝光技术,还可以扩展到32nm节点的应用,但成本会增加;如果特征尺寸缩小到22nm和16nm节点,EUV光刻、无掩模光刻以及纳米压印光刻等将成为未来发展的重要研究方向。在对各种光刻技术的原理、特点以及优缺点等分析对比的基础上,对未来主流光刻技术的发展做了一定的展望。Based on the decreasing of the feature size, the history of latest advanced lithography and the mainstream lithography techniques for each feature size are summarized. 193 ArF lithography is the core technique for 90 nm nodes, while 193 nm immersion lithography is widely accepted as the first choice for 65 nm and 45 nm nodes. Combining with double pattering, it would be even extended to 32 nm node with the cost increasing. Furthermore, EUV lithography, maskless lithography and nano-imprint lithography will become the main study topics for 22 nm and 16 nm. These lithography techniques are compared and analyzed from the principle, merits and drawbacks, application status. Finally, the mainstream lithography techniques in the few decades are predicted hriefly, which may be advisory in the study of lithography techniques.

关 键 词：浸入式光刻 EUV光刻 无掩模光刻 纳米压印光刻 特征尺寸 

分 类 号：TN305.7[电子电信—物理电子学]