Co掺杂的ZnO室温铁磁半导体材料制备与磁性和光学特性研究  

Synthesis and magnetic,optical properties of Co doped ZnO room-temperature ferromagnetic semiconductor

作　　者：程兴旺[1] 李祥[1] 高院玲[1] 于宙[1] 龙雪[1] 刘颖[1] 

机构地区：[1]北京理工大学材料科学与工程学院,北京100081

出　　处：《物理学报》2009年第3期2018-2022,共5页Acta Physica Sinica

摘　　要：采用溶胶-凝胶法制备出具有室温铁磁性的Co掺杂的ZnO稀磁半导体材料.通过对样品的结构、磁性和发光特性的研究发现,样品具有室温铁磁性,并发现其铁磁性源于磁性离子对ZnO中Zn离子的取代.对不同温度制备的样品的磁性以及其发光特性的变化研究发现,样品的铁磁性与样品中锌间隙位(Zni)缺陷的密度有关.Co-doped ZnO polycrystalline was synthesized with sol-gel method. Room temperature ferromagnetism （FM） was observed in the synthesized sample. Studies onits structural and optical properties indicate that the FM is originated from the Co substitution for Zn in ZnO crystalline lattice,and the temperature of sample synthesis significantly affects the FM and photoluminescence of the corresponding samples,suggesting that Zn interstitial could be responsible for the origin of the FM.

关 键 词：ZNO 稀磁半导体 铁磁性 

分 类 号：O472[理学—半导体物理]