工艺条件对硼掺杂纳米硅薄膜微结构及力学性能的影响  

Influence of the Deposition Parameters on the Microstructure and Mechanical Properties of B-doped nc-Si∶H Films

作　　者：丁建宁[1,2] 祁宏山[1] 袁宁一[2] 何宇亮[1] 程广贵[1] 范真[1] 潘海彬[1] 王君雄[1] 王秀琴[2] 

机构地区：[1]江苏大学微纳米科学技术研究中心,镇江212013 [2]江苏工业学院,常州213016

出　　处：《真空科学与技术学报》2009年第2期188-193,共6页Chinese Journal of Vacuum Science and Technology

基　　金：江苏省“六大人才高峰”资助项目(No.06-D-022)

摘　　要：采用射频和直流偏压(RF+DC)双重激励源,在等离子体增强化学气相沉积(PECVD)系统中成功制备了掺硼纳米硅薄膜。改变衬底温度、射频功率和退火温度几个关键工艺参数,利用拉曼(Raman)谱仪、薄膜测厚仪和原子力显微镜(AFM)对掺硼纳米硅薄膜的微结构进行了分析;应用纳米压痕法研究了工艺条件对薄膜弹性模量及硬度等力学性能的影响关系。结果表明:薄膜晶态比、平均晶粒大小随着衬底温度的升高均有增大趋势;射频功率对提高薄膜生长速率存在最优值条件;退火对本征和掺硼薄膜表面形貌特征有较大影响,退火后掺硼薄膜表面粗糙度增大明显。薄膜弹性模量及硬度很大程度上受射频功率和后序处理条件的影响,退火使薄膜的力学性能有所提高。针对实验现象,从薄膜结构方面进行了相关的理论阐释。The boron-doped hydrogenatd nanocrystalline silicon （nc-Si： H） films were grown by plasma enhanced chemical vapor deposition （PECVD）. The microstmctures and mechanical properties of the films were characterized with Raman spectroscopy, atomic force microscopy （AFM） and conventional mechanical probes. The influence of various film growth conditions, including the substrate temperature, RF power, and annealing temperature, on its microstructures and mechanical properties was studied. The results show that the films growth conditions strongly affect the the films. For instance, as the substrate temperature rises up, the average grain size increases; annealing significantly roughens the surfaces of the B-doped and the control samples, and improves the mechanical properties of the B-doped films. We found that the deposition rate can be optimized at a certain RF power. Possible film growth mechanisms were tentatively discussed.

关 键 词：纳米硅薄膜 掺硼 弹性模量 退火 AFM 

分 类 号：O484.1[理学—固体物理]