Solution-based metal induced crystallization of a-Si  

作　　者：吴春亚 李学冬 赵淑云 李娟 孟志国 熊绍珍 张芳 

机构地区：[1]Institute of Photo-Electronics,Nankai University [2]The Tianjin Key Laboratory for Photo-electronic Thin Film Devices and Technology [3]Key Laboratory of Opto-electronic Information Science and Technology(Nankai University and Tianjin University),the Ministry of Education [4]National High Technology Research and Development Center,the Ministry of Science and Technology

出　　处：《Chinese Physics B》2009年第3期1237-1241,共5页中国物理B（英文版）

基　　金：supported by Key Project of National Natural Science Foundation of China (Grant No 60437030);"863" Project of National Ministry of Science and Technology of China (Grant No 2004AA33570);Tianjin Natural Science Foundation of China (Grant No 05YFJMJC01400)

摘　　要：This paper investigates a simplified metal induced crystallization （MIC） of a-Si, named solution-based MIC （SMIC）. The nickel inducing source was formed on a-Si from salt solution dissolved in de-ionized water or ethanol, a-Si thin film was deposited with low pressure chemical vapour deposition or plasma enhanced chemical vapour deposition as precursor material for MIC. It finds that the content of nickel source formed on a-Si can be controlled by solution concentration and dipping time. The dependence of crystallization rate of a-Si on annealing time illustrated that the linear density of nickel source was another critical factor that affects the crystallization of a-Si, besides the diffusion of nickel disilicide. The highest electron Hall mobility of thus prepared S-MIC poly-Si is 45.6 cm^2/（V· s）. By using this S-MIC poly-Si, thin film transistors and display scan drivers were made, and their characteristics are presented.This paper investigates a simplified metal induced crystallization （MIC） of a-Si, named solution-based MIC （SMIC）. The nickel inducing source was formed on a-Si from salt solution dissolved in de-ionized water or ethanol, a-Si thin film was deposited with low pressure chemical vapour deposition or plasma enhanced chemical vapour deposition as precursor material for MIC. It finds that the content of nickel source formed on a-Si can be controlled by solution concentration and dipping time. The dependence of crystallization rate of a-Si on annealing time illustrated that the linear density of nickel source was another critical factor that affects the crystallization of a-Si, besides the diffusion of nickel disilicide. The highest electron Hall mobility of thus prepared S-MIC poly-Si is 45.6 cm^2/（V· s）. By using this S-MIC poly-Si, thin film transistors and display scan drivers were made, and their characteristics are presented.

关 键 词：Ni-salt source metal induced crystallization （MIC） POLY-SI TFT 

分 类 号：TN304.055[电子电信—物理电子学]