脉冲准分子激光制备PCLT热释电薄膜  

Pulsed Laser Deposition of Pyroelectric PCLT Thin Films on Silicon Substrates

作　　者：郑立荣[1] 杨平雄[1] 林成鲁[1] 邹世昌[1] 

机构地区：[1]中国科学院上海冶金所信息功能材料国家重点实验室,上海200050

出　　处：《中国激光》1998年第5期473-476,共4页Chinese Journal of Lasers

基　　金：全国自然科学重点基金资助项目(No.69738020)。

摘　　要：采用脉冲激光沉积的方法,在Pt/SiO_2/Si衬底上制备了掺Ca的(Pb,La)TiO_3薄膜。薄膜呈多晶结构,具有较好的铁电性和热释电性。由于掺Ca的作用,使薄膜的材料探测优值和电压响应优值几乎与单晶MgO衬底上的c轴取向的PbTiO_3或(Ph,La)TiO_3薄膜相比拟。这些较好的实验结果是在硅基衬底上的铁电薄膜中获得的,因而对研制单片集成的红外热释电阵列将有一定的意义。In this paper, Ca modified ( Pb, La )TiOs films were deposited on Pt coated silicon substrates using an ArF excimer laser. The films are polycrystalline and exhibit good ferroelectric and pyroelectric properties at room temperature. Because of the Ca modification, the figures of merit of the films for both specific detectivity and voltage responsivity are almost comparable with those of c- axis oriented PbTiO3 or (Pb, La) TiO3 films on the MgO single crystal substrate. Since these good results are obtained from the films on silicon, it is therefore of significance for monolithic integrated infrared image sensors.

关 键 词：PCLT 脉冲激光沉积 铁电薄膜 热释电 

分 类 号：TM221.051[一般工业技术—材料科学与工程] TN304.9[电气工程—电工理论与新技术]