双极型器件基区电阻的测量  

Measurement of Base Resistance of Bipolar Transistor

作　　者：冒慧敏 

机构地区：[1]上海先进半导体制造有限公司

出　　处：《半导体技术》1998年第3期29-31,共3页Semiconductor Technology

摘　　要：着重介绍了三种测量基区电阻Ｒｂ的ＤＣ测量法，并通过反面实例说明其中两种方法（１．由Ｉ－Ｖ特性来提取Ｒｂ及Ｒｅ；２．基于碰撞离子产生的反向基区电流的ＤＣ法）的局限性，指出第三种方法（双基极引线孔法）是值得借鉴的方法。ＤＣ测量法因其简单易行而被广泛接受，但在实践中须特别注意其适用范围。Three DC measurements of the base resistance Rb are presented in this paper.The limitation of two of them(1.extracting Rb and Re from IV curves;2.DC measurement based on reverse base current induced by impact inos)is illustrated by an example.The third method (double base contacts)is a worth trying method.DC measurement is widely accepted because of its simple measurement equipments and shortest time.But it is important to know its limitation in practice.

关 键 词：基区电阻 DC测量法 器件参数 双极型 半导体器件 

分 类 号：TN303[电子电信—物理电子学]