低温硅双极晶体管电流增益研究  

Study on Current Gains of Low Temperature Silicon Bipolar Transistors

作　　者：李彦波[1] 薄仕群[1] 

机构地区：[1]河北大学电子系

出　　处：《半导体技术》1998年第3期32-36,共5页Semiconductor Technology

摘　　要：着重分析了多晶硅发射极对提高电流增益的作用和低温下集电区中性杂质碰撞电离引起的电流倍增效应。导出多晶硅发射极晶体管电流增益的表达式，很好地解释了实验结果。The contribution of polysilicon emitter to the improved current gain and the current multiplication effect caused by collision on ionization of the neutral impurities in the collector region at low temperature are both discussed in this paper.A new current gain expression for polysilicon emitter transistor was derived and the experimental result was showed.

关 键 词：硅双极晶体管 电流倍增 多晶硅发射极 

分 类 号：TN322.8[电子电信—物理电子学] TN325.2