室温溅射制备氧化锌铝薄膜及电性能研究  

FABRICATION AND RESISTIVTTY OF ZnO:AI THIN FILMS PREPARED BY DC MAGNETRON SPUTTERING AT ROOM TEMPERATURE

作　　者：任明放[1] 王华[1] 许积文[1] 杨玲[1] 

机构地区：[1]桂林电子科技大学信息材料科学与工程系,桂林541004

出　　处：《太阳能学报》2009年第3期344-347,共4页Acta Energiae Solaris Sinica

基　　金：广西高校百名中青年学科带头人资助计划(RC20060809014)

摘　　要：采用直流磁控溅射工艺,室温下在载玻片上制备了氧化锌铝透明导电薄膜。研究了溅射功率和氩气压强对薄膜微观结构和电性能的影响。研究表明:溅射功率和氩气压强通过改变晶粒尺寸和晶界所产生的散射作用而影响薄膜的导电性能。溅射功率低于100W时,薄膜的电阻率随功率增加而明显降低,但超过100W后,薄膜的电阻率下降趋缓,并最终趋于平稳;氩气压强在0.6～3.0Pa范围内增大时,薄膜的电阻率先缓慢减小后逐步增大,当氩气压强为1.5Pa时可获得1.4×10^(-3)Ω·cm的最小电阻率。ZnO： Al thin films were prepared on slide glass substrates by non-reactive DC magnetron sputtering at room temperature. The effects of sputtering power and argon gas pressure on microstrueture, growth behavior and electrical properties of ZnO： Al thin films were investigated. The experimental results showed that the sputtering power and argon gas pressure effect on the resistivity of ZnO： Al films due to the change of dispersion related the grain and crystal boundary. The resistivity of ZnO： Al films decreases sharply with the increase of sputtering power from 60W to 100W, then decreases gently when the sputtering power is over 100W. When the argon gas pressure increases from 0.6Pa to 3 .0Pa, the resistivity of ZnO： Al films decreases to a lowest resistivity of 1.4×10^-3Ω·cm when the argon gas pressure is 1.5Pa, then increases gently.

关 键 词：氧化锌铝 透明导电薄膜 导电性能 磁控溅射 

分 类 号：O484[理学—固体物理]