沉积在硅尖上的氮化硼薄膜的场发射特性(英文)  

Field Emission Characteristics of Boron Nitride Films Deposited on Si-tip Arrays

作　　者：姜坤[1] 李媛[1] 顾广瑞[1] 

机构地区：[1]延边大学理学院物理系,吉林延吉133002

出　　处：《延边大学学报（自然科学版）》2009年第1期36-39,85,共5页Journal of Yanbian University（Natural Science Edition）

摘　　要：利用射频磁控溅射方法,在硅尖上沉积了氮化硼(BN)薄膜.红外光谱分析表明,BN薄膜结构为六角BN(h-BN)相(1 380 cm-1和780 cm-1).在超高真空系统中测量了BN薄膜的场发射特性,与沉积在硅片上的BN薄膜比较,沉积在硅尖上的BN薄膜的场发射特性明显提高.开启电场为8 V/μm,最高发射电流为300μA/cm2.沉积在硅尖上的BN薄膜的场发射FN曲线为两段直线,这可能是由于电子发射源于硅尖的尖部和根部造成的.Boron nitride（BN） films are prepared on Si-tip arrays by rf magnetron sputtering physical vapor deposition（PVD）. The FTIR spectra consists of two absorption bands at about 780 cm^-1 and 1 380 cm^-1 , which suggests the existence of the hexagonal phase of BN. The field emission characteristics of the BN films on Si-tips are compared with that of BN on Si wafer. The field emission characteristics of the BN-coated on Si-tips are evidently better than that of BN-coated on Si due to field enhancement effects of Si-tips. A turn-on electric field of 8V/μm and an emission current density of 300μA/cm^2 are obtained for the BN-coated on Si-tips. Two portions of straight lines are obtained in the Fowler-Nordheim（FN） plots of BN-coated on Si-tips. This may be due to electron emission from the foot and tip of Si-tips.

关 键 词：BN薄膜 场发射 硅尖 

分 类 号：TN873.95[电子电信—信息与通信工程]