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机构地区:[1]西安理工大学自动化与信息工程学院 [2]西安电力电子技术研究所
出 处:《Journal of Semiconductors》1998年第5期362-368,共7页半导体学报(英文版)
摘 要:本文提出了用于模拟GTO关断特性的SPICE等效电路模型.根据器件的工作特性并结合器件结构提取模型参数.用此模型对1000A/2500V阳极短路型GTO的关断特性进行了模拟,包括关断电流拖尾现象在内的整个关断过程,模拟结果与器件的测试结果吻合较好.Abstract A new model for SPICE simulation of the turn off process in GTO is presented to resolve the problem that the earlier models can not be used to simulate its current tail precisely because of their default of the function to describe the charge transmission in the turn off process of GTO. The new model is successfully used to simulate the turn off performance of a 1000A/2500V anode short GTO device. As a comparison, simulation with the earlier model is also carried out for the same device. It is evident that the current tailing is appeared in the plot from the new model and disappeared in the plot from the earlier model. Comparing to the test data of the same device, the simulation results is precise enough to ensure a precise circuit design.
分 类 号:TN34[电子电信—物理电子学]
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