含耦合双量子阱的半导体微腔的透射谱  

Transmission Spectrum in Semiconductor Microcavity Embedded Coupled Quantum Wells

作　　者：王文利[1] 姬扬[1] 郑厚植[1] 

机构地区：[1]中国科学院半导体研究所

出　　处：《Journal of Semiconductors》1998年第5期385-388,共4页半导体学报（英文版）

摘　　要：本文从基本的光跃迁理论出发，用半经典的线性色散模型，计算了双量子阱耦合情况下微腔透射谱．计算结果表明，当吸收系数取２×１０－２ｎｍ－１时，在微腔的透射谱上能看到三个很高的透射峰，并且峰的线宽要窄于冷腔透射峰的线宽．Abstract The transmission spectrum in microcavity embedded coupled quantum wells is calculated by using the semi classical linear dispersion model. The rusults show when the absorpsion is 2×10 -2 nm -1 , the cavity transmission spectrum exhibits three sharp peaks and their peak width is narrower than that of the empty cavity. The effect is a manifestation of strong coupled exciton state photo state coupling.

关 键 词：分子束外延 MOCVD 半导体微腔 透射谱 量子阱 

分 类 号：TN301[电子电信—物理电子学]