PHEMT MMIC功率放大器设计与实现  

Design and Implementation of PHEMT MMIC Power Amplifier

作　　者：黄晓俊[1] 邢凌燕[1] 

机构地区：[1]喀什师范学院,新疆喀什844000

出　　处：《现代电子技术》2009年第7期171-173,共3页Modern Electronics Technique

摘　　要：介绍一种PHEMT MMIC功率放大器设计与实现方案。方案采用内匹配电路,盒体设计考虑到电路腔体内部电磁兼容特性的影响,因此具有增益高、集成度高、寄生特性较低、可靠性高和可操作性好等优点。将此设计方案通过仿真验证,结果表明各项指标可以满足设计预期的期望值,同时证明了方案的可行性。A method designing PHEMT MMIC power amplifier is introduced. The method adopts the matching circuit. Moreover,effects of EMC are considered. So it has high - gain, high integration, low parasitic characteristics, high reliability and operational advantages. The designing simulation results can match the expected value of the initial period and indicate the feasible of this method.

关 键 词：赝配高电子迁移率晶体管 微波单片集成电路 功率放大器 增益 

分 类 号：TN722[电子电信—电路与系统]