工艺参数对直流反应磁控溅射ZnO:Al薄膜沉积速率的影响  

Effect of Technological parameters on deposition rate of ZAO films prepared by DC magnetron reactive sputtering

作　　者：邹上荣[1] 王海燕[1] 耿梅艳[1] 穆慧[1] 

机构地区：[1]郑州大学物理工程学院材料物理教育部重点实验室,河南郑州450052

出　　处：《真空》2009年第2期45-48,共4页Vacuum

摘　　要：实验以合金靶材在玻璃衬底上运用直流反应磁控溅射法制备了ZAO(ZnO:Al)透明导电薄膜样品。研究了O2气流量,衬底温度,以及反应气压和溅射功率等工艺参数对ZAO薄膜沉积速率的影响规律。结果表明:沉积速率随O2气流量的增加显著降低,靶面溅射模式由金属模式转变为氧化物模式,而且这种转变趋势在改变其他参数时依然明显;沉积速率随溅射功率的增大几乎成线性增加,但随衬底温度的变化并不大;在反应气压增大的情况下,沉积速率不断上升,达到最大值后,又随气压的增大不断下降。The ZAO （ZnO ：AI） transparent conductive films were deposited on glass substrates by DC magnetron reactive sputtering process with an alloy target. To control the fihn thickness, the influence of such technological parameters as oxygen flow rate, substrate tempreture, reaction pressure and sputtering powc on the fihn deposition rate was studied systematically. The results showed that the deposition rate decreases greatly with the increasing oxygen flow rate, and the mode of sputtering from target is transformed into oxide mode from metal one. The abrupt transform keeps obvious no matter how other parameters change. The deposition rate increases almost linearly with increasing sputtering power, but it is not sensitive to substrate extent with increasing reaction pressure then decreases gradually.

关 键 词：ZAO薄膜 直流反应磁控溅射 沉积速率 

分 类 号：TB43[一般工业技术]