新型4H-SiC射频功率MESFET大信号经验电容模型  

Novel Empirical Large-Signal Capacitance Model for 4H-SiC RF Power MESFET

作　　者：刘莹[1] 国云川[1] 黄文[1] 

机构地区：[1]电子科技大学电子工程学院,成都610054

出　　处：《微波学报》2010年第S1期424-426,共3页Journal of Microwaves

摘　　要：基于4H-SiC射频功率MESFET器件的工作机理,提出了一种新型的大信号经验电容模型。针对此模型参数的提取采用最小二乘法和遗传算法,算法用MATLAB语言实现,与传统算法相比,经验电容模型参数的初值估计和优化更为简单准确。提取的模型重要参数具有一定的物理意义,其他拟合参数值也具有物理量级。模型仿真结果和实测数据拟合度较好,从而验证了所提出的大信号经验电容模型的准确性。A novel empirical large-signal capacitance model for 4H-SiC RF power MESFET is presented based on the operational principle of devices.The least squares method and genetic algorithm are used to optimize the parameter extraction,and MATLAB is used to realize it.Compared with the traditional algorithm,the initial value computing and optimizing of model parameters is more simple and accurate.The main extracted parameters are physical proposed,and other fitting parameters also have physical magnitude.The simulation result fits well with the testing data,which shows the present model has good accuracy.

关 键 词：4H-碳化硅 金属半导体场效应晶体管 大信号模型 经验电容模型 遗传算法 

分 类 号：TN386[电子电信—物理电子学]