CMOS存储器瞬时辐照效应规律实验研究  

Investigation into Transient Radiation Effects of CMOS SRAMs

作　　者：王桂珍[1] 李瑞斌[1] 白小燕[1] 杨善潮[1] 郭晓强[1] 李斌[1] 郑国鑫[1] 

机构地区：[1]西北核技术研究所,西安710024

出　　处：《微电子学》2009年第2期276-279,共4页Microelectronics

摘　　要：对超深亚微米存储器(32 k SRAM)激光辐照下的剂量率效应进行了初步研究,实验测量了SRAM激光辐照下的效应规律,比较了零时SRAM的状态(读状态和片选无效状态)对效应规律的影响,得到了一些初步的效应规律。Transient radiation effects with pulsed laser on CMOS SRAM was investigated. Numbers of upset and power current versus laser energy were measured. Experimental results indicated that upset with laser energy lower than 0.2 mJ occurred primarily due to local photocurrent, while, with laser energy higher than 0.2 mJ, upset occurred primarily due to rail span collapse.

关 键 词：存储器 瞬时辐照效应 激光辐照 翻转 闩锁 

分 类 号：TN43[电子电信—微电子学与固体电子学] TL99[核科学技术—核技术及应用]