氧分压对ZnO薄膜结构、光学和电学特性的影响  

Influence of Structure and Optical Properties of ZnO Films at Different Oxygen Pressure

作　　者：于威[1] 许贺菊[1] 张丽[1] 滕晓云[1] 张锦川[1] 傅广生[1] 

机构地区：[1]河北大学物理科学与技术学院,河北保定071002

出　　处：《稀有金属》2007年第S2期25-28,共4页Chinese Journal of Rare Metals

基　　金：河北省自然科学基金(E2006001006)

摘　　要：采用螺旋波等离子体辅助射频溅射技术在Al2O3衬底的(0001)面上制备了ZnO薄膜。通过对其结构,光学及电学性质的分析,探讨了氧分压对薄膜生长及其特性的影响。结果表明,由于等离子体对反应气体的活化及载能粒子对表面反应的辅助作用,采用该等离子体辅助溅射技术能够在合适的氧分压下制得较高质量的ZnO薄膜。ZnO films were deposited on Al2O3(0001) substrates by the technique of helicon wave plasma assistant sputtering at different oxygen pressure.Through the analysis of the structure,optical and electrical properties of the films.The influence of the oxygen pressure were discussed on the properties of the ZnO films growth properties.The results indicate that the high quality growth of the ZnO films can achieved in an appropriate pressure due to the technique of the helicon wave plasma assistant.

关 键 词：ZNO薄膜 螺旋波等离子体 氧分压 

分 类 号：TN304.055[电子电信—物理电子学]