氧注入制成SOI材料的研究  

STUDY OF SOI PREPARED BY OXYGEN ION IMPLANTATION

作　　者：董顺乐[1] 丛培杰[1] 刘家瑞[2] 马瑞芬 

机构地区：[1]山东大学物理系 [2]中国科学院物理研究所 [3]济南半导体元件实验所

出　　处：《山东大学学报（理学版）》1989年第4期51-55,共5页Journal of Shandong University(Natural Science)

摘　　要：采用加热靶和少量氮离子注入制成了 SOI 材料,在1180℃、氮气保护下进行了2小时的退火。离子沟道背散射测量和电子通道花样观测结果表明:加热靶和少量氮离子注入能有效地改善顶部硅层的单晶质量.Silicon On Insulator(SOI)materials are produced by a high dose O^+ implantation,followed by a low dose N_-^+ implantation into St-substrate heated at different temperatures.Postannealing is conducted at 1180℃ for 2 hours in nitrogen atmosphere. The results of both Aligned Rutherford Backscattering spectroscopy and Electron Channel Pattern show that the quality of the top silicon layer of annealed samples can be remarkably improved by elevating the implantation temperature of the substrate and using a low dose nitrogen implantation before annealing.

关 键 词：离子注入 SOI 沟道 

分 类 号：N[自然科学总论]