调整靶衬间距实现纳米Si晶粒尺寸的均匀可控  

Size-Uniform and Controllable Si Nanoparticles Obtained by Regulating Target-to-Substrate Distance

作　　者：王英龙[1] 褚立志[1] 邓泽超[1] 闫常瑜[1] 傅广生[1] 

机构地区：[1]河北大学物理科学与技术学院,河北保定071002

出　　处：《中国激光》2009年第4期989-992,共4页Chinese Journal of Lasers

基　　金：国家自然科学基金(10774036);河北省自然科学基金(E2005000129;E2008000631);河北省教育厅(Z2007222)资助项目

摘　　要：采用脉冲激光烧蚀装置,在10 Pa的氩气环境下,在1～6 cm范围内调整衬底与靶的距离沉积制备了纳米Si薄膜。X射线衍射(XRD)谱和Raman谱测量均证实,纳米Si晶粒已经形成;利用扫描电子显微镜(SEM)观测了所形成的纳米Si薄膜的表面形貌。结果表明,随着靶衬间距的增加,所形成的纳米Si晶粒的平均尺寸减小(尺寸均匀性变差),在3 cm时达到最小值(尺寸分布最均匀),而后开始增大(尺寸均匀性变差)。利用蒙特-卡罗(MonteCarlo)方法,对不同靶衬间距下烧蚀产物的输运动力学过程进行了数值模拟,得到与实验结果相同的结论。The nanocrystalline silicon films are prepared by pulsed laser ablation at the ambient Ar pressure of 10 Pa and the target-to-substrate distance from 1 cm to 6 cm. Both the X-ray diffraction （XRD） and Raman spectra indicate the films are nanocrystalline, which means that they are composed of Si nanoparticles. The surface morphology of the nanocrystalline silicon films is observed by using scanning electron microscopy （SEM）. The result shows that with increasing target- substrate distance, the average size of Si nanoparticles first decreases and reaches its minimum at 3 cm, and then increases. The transport dynamic process of the ablated particles in different target-to-substrate distances is numerically simulated by Monte Carlo method. The numerical simulations accord with the experimental results.

关 键 词：薄膜 纳米SI晶粒 脉冲激光烧蚀 MONTE CARLO模拟 振荡稳定时间 

分 类 号：O484.1[理学—固体物理]