Si衬底功率型GaN基绿光LED性能  

Characterization of High-Power GaN-Based Green LED on Si Substrate

作　　者：苏丽伟[1] 游达 程海英[1,2] 江风益[1,2] 

机构地区：[1]南昌大学教育部发光材料与器件工程研究中心,江西南昌330047 [2]晶能光电(江西)有限公司,江西南昌330096

出　　处：《光学学报》2009年第4期1066-1069,共4页Acta Optica Sinica

基　　金：国家863计划纳米专项(2003AA302160);国家863计划光电子主题课题(2005AA311010)资助

摘　　要：对本实验室在Si(111)衬底上MOCVD法生长的芯片尺寸为400μm×600μm功率型绿光LED的光电性能进行研究。带有银反射镜的LED在20 mA的电流下正向工作电压为3.59 V,主波长518 nm,输出光功率为7.3 mW,90 mA下达到28.2 mW,发光功率效率为7.5%,光输出饱和电流高达600 mA。在200 mA电流下加速老化216 h,有银反射镜的LED光衰小于无银反射镜的LED,把这一现象归结于Ag反射镜在提高出光效率的同时,降低了芯片本身的温度。本器件有良好的发光效率、光衰和光输出饱和电流等综合特性表明,Si衬底GaN基绿光LED具有诱人的发展前景。Optical and electrical characterization of high-power green LED on Si （111） substrate fabricated by MOCVD with chip dimension of 400 μm × 600 μm is studued. The forward bias of the LED with Ag reflector is about 3.59 V under 20 mA, and the light output power is about 7.3 mW with dominant wavelength of 518 nm. The light output power achieves 28.2 mW under 90 mA, the light output efficiency is 7.5%, and the saturated output current is 600 mA. The light degradation of LED with Ag reflector is smaller than that without Ag reflector after 216 h accelerated aging test under 200 mA. This phenomenon is induced by Ag reflector, which can raise the light extraction efficiency and lower the temperature of the chip itself. This characterization of great light efficiency, light degradation and saturated output current suggests that GaN-based green LED on Si substrate has a promising prospect.

关 键 词：光学材料 Ag反射镜 加速老化 SI衬底 绿光LED 

分 类 号：TN312.8[电子电信—物理电子学]