漂移区槽氧高压SOI-LDMOS器件模型  

A model of high voltage SOI-LDMOS with trench oxide in drift region

作　　者：阳小明[1] 李天倩[1] 

机构地区：[1]西华大学电气信息学院,四川成都610039

出　　处：《西南民族大学学报（自然科学版）》2009年第2期332-335,共4页Journal of Southwest Minzu University(Natural Science Edition)

摘　　要：为了获得SOI-LDMOS器件耐压和比导通电阻的良好折衷,提出了一种漂移区槽氧SOI-LDMOS高压器件新结构.利用漂移区槽氧和栅、漏场板优化横向电场提高了横向耐压和漂移区的渗杂浓度.借助二维仿真软件对该器件的耐压和比导通电阻特性进行了研究,结果表明该器件与常规SOI-LDMOS结构相比在相同漂移区长度下耐压提高了31%,在相同耐压下比导通电阻降低了34.8%.In order to obtain good compromise of the breakdown voltage and the specific on-resistance of SOI-LDMOS, a SOI-LDMOS with trench oxide in drift region is proposed. The higher breakdown voltage and doping concentration are obtained by optimizing the length of gate field plates, the length of field drain plates and the thickness of trench oxide. Its breakdown voltage and specific on-resistance are studied by simulating with 2-D MEDICI. The simulation results show the breakdown voltage increases by 31% at the same length of the drift region and the specific on-resistance decreases by 34.8 % at ,the same breakdown voltage.

关 键 词：绝缘体上的硅 击穿电压 比导通电阻 槽氧 

分 类 号：TN386[电子电信—物理电子学]