化学机械抛光过程优化研究  

Study on Optimum Process of CMP

作　　者：詹阳[1] 周国安[1] 

机构地区：[1]中国电子科技集团公司第四十五研究所,北京东燕郊101601

出　　处：《电子工业专用设备》2009年第4期37-39,共3页Equipment for Electronic Products Manufacturing

摘　　要：根据承载器与抛光台的转速、浆料中微粒尺寸及下压力对抛光工艺的影响进行统计分析,特别是工艺中的抛光去除率、金属碟形缺陷和层间介质的侵蚀作为输出结果的主要参考因素。采用3水平3因数的实验方案,结合信噪比方式对数据进行处理,使用田口玄一法进行数据的加工,从形成的3参数3水平对输出结果影响的3子图上,获取最优的工艺参数组合。选取根据经验的常用参数组合作为参照,发现新的优化方式能够提高10%的去除率,降低15%的碟形缺陷和侵蚀,显著的改善抛光质量。we get the statistical analysis about the speed of carrier and polishing table, particle size of slurry and down pressure that affect the technology, in particular removal rate, metal dishing and ILD erosion as output is very important factors. To do 3 levels and 3 factors experiment, to get data by the signal-to-noise ratio way, to use Taguchi concept processing the data, to form the 3 subfigure of 3 parameters and 3 levels, and to get the best optimization. Select project by the experience method as compare, the optimization process improve the material removal rate by about 10%, and reduced the erosion and dishing by more than 15%. All of that obvious improve the quality of the polishing wafer.

关 键 词：化学机械平坦化 去除率 碟形缺陷 侵蚀 下压力 颗粒尺寸 

分 类 号：TN305.2[电子电信—物理电子学]