RF-PECVD工艺参数对DLC膜结构及性能的影响  

Structure And Properties of the DLC Films Deposited By RF-PECVD Process

作　　者：谢红希[1] 凌贵[1] 朱正涛[1] 

机构地区：[1]华南理工大学机械与汽车工程学院,广东广州510640

出　　处：《材料科学与工程学报》2009年第2期190-194,共5页Journal of Materials Science and Engineering

摘　　要：用射频等离子增强化学气相沉积(RF-PECVD)法,在常温下实现在载玻片和单晶硅基片上沉积类金刚石(DLC)薄膜。研究结果表明,工艺参数(功率密度、氩气分压、丁烷分压和极间距)的变化对薄膜硬度和透过率影响较大。薄膜硬度随着功率密度的增加而增加;随着氩气分压或丁烷分压的增加,薄膜硬度降低。薄膜的透过率随着氩气分压先增后减;丁烷分压为0.42～0.7Pa或板极间距为4.5～8cm时,薄膜的透过率均达到90%。Diamond-like carbon films were successfully deposited on the glass and Si substrates at normal temperature by RF-PECVD process. The results show that the process parameters have an influence on the structure, hardness and transmittance of the film. The hardness of the film increases with the power density but decreases with argon gas pressure or butane pressure. The transmittance of the film goes up first with the argon pressure but later fall down. When the butane pressure is between 0.42 and 0.7Pa or the electrode spacing is between 4.5-8cm, the transmittance is both up to 90%.

关 键 词：类金刚石薄膜 射频等离子增强化学气相沉积 拉曼光谱 透过率 

分 类 号：TQ153.1[化学工程—电化学工业] TQ153.6