4H-SiC MESFET大信号非线性特性分析  

The Nonlinear Analysis for 4H-SiC MESFETs

作　　者：吕红亮[1] 车勇[2] 张义门[1] 张玉明[1] 郭辉[1] 张林[1] 

机构地区：[1]西安电子科技大学微电子学院,教育部宽禁带半导体重点实验室,西安710071 [2]武警工程学院军械运输系,西安710086

出　　处：《微波学报》2009年第2期78-82,共5页Journal of Microwaves

基　　金：国家自然科学基金(No.60606022);应用材料创新基金项目(No.XA-AM-200702)

摘　　要：采用Volterra级数法对4H-SiC射频MESFET的大信号非线性特性进行了分析,并研究了器件尺寸与线性度的关系。模型考虑了陷阱效应对非线性特性的影响,模拟结果能够较好地反映实验结果。进一步分析表明,在1GHz和1.01GHz频率下,当栅长从0.8μm增大到1.6μm,器件的输入(输出)三阶截取点从33.55dBm(36.26dBm)减小到18.1dBm(13.4dBm),1dB压缩点从24dBm下降到7.43dBm。为实际器件的线性化设计提供理论依据。Based on the equivalent circuit of SiC MESFETs, the large signal nonlinear characteristics is investigated using Voherra series. The model including trapping effect reflects the measured nonlinear characteristics of SiC MESFETs very well. For a 0.8, 1.2 and 1.6μm gate length FET operating at 1 GHz, output referred third-order intercept point （ OIP3 ） are 36.3 dBm, 24.6 and 14.3 dBm respectively. The shorter gate length devices show improvement in linearity. The simulation indicates that the dispersion frequency increases with elevated temperature. The proposed model is valuable for the analysis of frequency dispersion in the device.

关 键 词：碳化硅 金属半导体场效应晶体管 非线性 VOLTERRA级数 

分 类 号：TN386[电子电信—物理电子学] TB485.1[一般工业技术—包装工程]