离子注入对ITO薄膜电学特性的影响(英文)  

Effects of Ion Implantation on Electrical Properties of ITO Thin Film

作　　者：王文文[1] 王峥[1] 郝维昌[1] 

机构地区：[1]北京航空航天大学理学院物理系,北京100191

出　　处：《液晶与显示》2009年第2期187-192,共6页Chinese Journal of Liquid Crystals and Displays

基　　金：Supported by National Natural Science Foundation of China (No.50872005)

摘　　要：对系列In2O3:Sn (ITO)薄膜样品分别实施了不同剂量的Sn+, Ag+和Mo+离子注入并将它们在250 ℃下进行了热处理。利用霍耳测量研究了原始样品及注入和退火前后各样品的电学特性。研究了ITO薄膜的电学参数受离子注入的种类及剂量的影响。实验证明不同种类的离子注入会不同程度地降低ITO的导电性能,但热处理的效应与之相反。3种金属中,Sn+离子对薄膜造成的注入损伤最小,而高价的钼离子可以替换铟离子的位置成为施主,当注入剂量为1×1015cm-2时,经过Mo+离子注入和后续退火的ITO薄膜,载流子浓度提高了14 %。In2O3 ：Sn （ITO） thin films were implanted by Sn^＋ , Ag^＋ and Mo^＋ ions with different dose of implantation and annealed in air at 250 ℃; for 1 h. The as-deposited sample and implanted ones before and after annealing were characterized by Hall measurement to investigate the dependencies of the electrical properties of ITO on the metal kind and dose of ion implantation. It is indicated that various ion implantation decrease the conductivities of ITO, while heat annealing has an opposite effect. Mo^＋ ion implantation supplies more carriers than Sn^＋ and Ag^＋. Sn^＋ ion implantation influences the mobility of ITO the least among the three kinds of ions. With a dose of 1 × 10^15 cm ^-2, Mo^＋ implantation and the following heat annealing increase the carrier concentration of ITO by 14%.

关 键 词：In2O3:Sn(ITO) 离子注入 热退火 电学特性 

分 类 号：TN305.3[电子电信—物理电子学]