氢在微晶硅薄膜低温沉积及退火过程中的影响  

Influence of Hydrogen on Microcrystalline Silicon Thin Film in Low Temperature Deposition and Annealling Process

作　　者：李瑞[1,2] 樊志琴[1] 张丽伟[3] 蔡根旺[1] 杨培霞[1] 

机构地区：[1]河南工业大学,河南郑州450052 [2]郑州大学,河南郑州450052 [3]新乡学院,河南新乡453000

出　　处：《硅酸盐通报》2009年第2期370-373,共4页Bulletin of the Chinese Ceramic Society

基　　金：河南工业大学科研基金(NO.06XJC037);2008新乡市科技发展计划项目(NO.08G064)

摘　　要：采用等离子体增强化学气相沉积(PECVD)法,在玻璃衬底上不同的氢稀释比下低温制备了微晶硅(μc-Si:H)薄膜。利用拉曼(Raman)散射谱研究显示当H2稀释比从95%升高到99%,所得硅膜晶粒大小从2.98nm增加8.79nm,晶化率从24%增加到91%;暗电导测试结果从1.32×10-6scm-1增加到7.24×10-3scm-1;沉积速率却大大降低。沉积出的薄膜在进行高温炉退火后,扫描电镜(SEM)显示样品表面孔洞变大增多,推测是氢逸出所致。Microcrystalline silicon thin films was deposited in low temperature on glass substrates and different H2 dilution by PECVD method. The Raman shift of samples show that when the HE dilution increased from 95% to 99% ,the crystal size and the crystalline ratio will increase from 2.98 nm to 8.79 nm, and 24% to 91% respectively. The dark-conductivity also increses. But the deposition speed slows down. All the results can be caused by hydrogen. It can be found from the SEM pictures that the holes on the the film surface become more and larger after they are annealled. It can also be concluded on hydrogen-escape in the film.

关 键 词：微晶硅薄膜 PECVD 低温沉积 退火 

分 类 号：O484[理学—固体物理]