溅射气氛和退火方式对硅纳米晶的形成及发光特性的影响  

Influence of Sputtering Ar/O Proportion and Annealing Method on the Preparation and Photoluminescent Properties of Silicon Nanocrystals

作　　者：胡峰[1] 衣立新[1] 王申伟[1] 高华[1] 何桢[1] 

机构地区：[1]北京交通大学光电子技术研究所发光与光信息技术教育部重点实验室,北京100044

出　　处：《发光学报》2009年第2期243-246,共4页Chinese Journal of Luminescence

基　　金：国家自然科学基金(60577022)资助项目

摘　　要：利用磁控溅射技术溅射硅靶,通过调节溅射气氛在硅衬底上生长了S iO/S iO2超晶格,热退火处理后超晶格中的S iO发生相分离得到硅纳米晶。通过比较不同退火方式对于硅纳米晶的形成的影响发现,管式炉退火处理的样品给出非常强的室温光致发光,其发光峰的峰位随着硅纳米晶尺寸的增大而红移,且管式炉退火比快速热退火更有利于硅纳米晶的形成。Because of the importance of controllable preparation of sihcon nanocrystals,（nc-Si）, to obtain efficient and steady visible light-emitting at room temperature, We presented a preparation method of silicon nanocrystals based on amorphous SiO/SiO2 superlattices in this paper. The samples were characterized by means of photoluminescence （PL） spectrum and Fourier transform infrared spectroum （FTIR） at room temperature to show the photoluminescent properties and structures. The SiO/SiO2 superlattices were deposited on Si substrates by magnetron sputtering technology through varying the sputtering Ar/O proportion, as to deposit SiO layers and SiO2 layers respectively. The silicon nanocrystals was preparated because of the phase separa- tion of the thin SiO layers in the SiO/SiO2 superlattices by a thermal annealing treatment at high temperature in N2 atmosphere and the size of silicon nanocrystals depends on the thickness of the SiO layers. Then photolumi- nescence is observed at room temperature and a obvious red-shifts was observed in the photoluminescence spectra with the grain size increasing of the silicon nanocrystals. Combining infrared absorption and photolumi- nescence spectra, it is also found that the pipe furnace thermal annealing is more advantageous to the form of silicon nanocrystals than a rapid thermal annealing treatment.

关 键 词：硅纳米晶 超晶格 磁控溅射 热退火 

分 类 号：O482.31[理学—固体物理]