一种硅埋置型微波多芯片组件封装的电性能  

Performance of a silicon-based embedded MMCM package

作　　者：戚龙松[1] 罗乐[1] 

机构地区：[1]中国科学院上海微系统与信息技术研究所,上海200050

出　　处：《功能材料与器件学报》2009年第2期125-131,共7页Journal of Functional Materials and Devices

摘　　要：研究了一种基于体硅工艺和BCB厚膜布线技术的微波多芯片组件新封装结构,将特定组件中多个微波芯片埋置在接地金属化的硅腔体中,通过热压焊金凸点将芯片垂直引出,并于其上布置多层BCB/Au微波传输线,层间互连则连采用电镀金凸点为通柱。对封装中各微波信号通路的电学性能、封装环境对芯片电学功能的影响和可集成于封装中的Ku波段带通滤波器进行了模拟与优化研究。A novel embedded package structure for Microwave Multichip Module （MMCM）is studied, which is based on MEMS process and BCB thick film technology. A set of microwave chips are embedded in metalized silicon cavities, and then electrically connected through bonded gold bumps to the upper multilayer BCB/Au transmission lines. Interlayer connection is realized by electroplated gold pillars. Per- formance of transmission lines, electric influence to chip introduced by package and Ku - band bandpass filters that can be integrated in this package are simulated and optimized by HFSS.

关 键 词：多芯片组件 埋置型封装 微波传输性能 

分 类 号：O441.4[理学—电磁学]