S钝化GaAs(100)衬底上分子束外延ZnSe薄膜的喇曼光谱研究  

Raman Scattering Study of ZnSe Epitaxially Grown on S Passivated (100) GaAs Substrates

作　　者：史向华[1] 靳彩霞[2] 凌震[2] 俞根才[2] 王杰[2] 侯晓远[2] 

机构地区：[1]长沙电力学院物理系 [2]复旦大学应用表面物理国家重点实验室

出　　处：《Journal of Semiconductors》1998年第3期166-171,共6页半导体学报（英文版）

摘　　要：用分子束外延法（ＭＢＥ）分别在经（ＮＨ４）２Ｓｘ溶液和Ｓ２Ｃｌ２溶液钝化的ＧａＡｓ（１００）衬底上生长了ＺｎＳｅ薄膜．用室温喇曼光谱对不同处理方法的ＧａＡｓ上所长ＺｎＳｅ薄膜的晶体质量和ＺｎＳｅ／ＧａＡｓ界面进行对比研究．用喇曼散射的空间相关模型定量分析了一级喇曼散射的空间相关长度与晶体质量间的关系．根据ＧａＡｓ的ＬＯ－等离子激元耦合模喇曼散射强度的变化，分析了不同Ｓ钝化方法对ＺｎＳｅ／ＧａＡｓ界面以及ＺｎＳｅ薄膜质量的影响．结果表明，Ｓ２Ｃｌ２溶液钝化的ＺｎＳｅ／ＧａＡｓ样品具有较低的界面态密度和较好的晶体质量，因此Ｓ２Ｃｌ２溶液钝化的效果明显优于（ＮＨ４）２Ｓｘ溶液．Abstract ZnSe films were grown by MBE on ( 100) GaAs substrastes passivated by (NH 4) 2S x and S 2Cl 2 solutions and characterized by room temperature Raman Scattering. The crystalline qualities of ZnSe films are studied by using the Spatial Corrlation Mode of Raman Scattering and ZnSe/GaAs interfaces are also analysised from the ratios of the intensity of the coupled longitudinal optical phonon plasma mode to that of the longitudinal optical mode of GaAs Raman peak. The results show that the ZnSe/GaAs samples passivated by S 2Cl 2 solutions have lower density of interface states and have higher crystalline qualities. The passivation effect of S 2Cl 2 solutions is much better than that of (NH 4) 2S x solutinns.

关 键 词：分子速外延 硒化锌 砷化镓 衬底 

分 类 号：TN304.25[电子电信—物理电子学] TN304.23