表面杂质浓度分布对晶体管负阻特性的影响  

Influence of Surface Impurity Profiles on Characteristics of Negative Resistance of Transistor

作　　者：裴素华[1,2] 薛成山[1,2] 赵善麒 

机构地区：[1]山东师范大学 [2]北京电子新技术研究开发中心

出　　处：《Journal of Semiconductors》1998年第3期202-205,共4页半导体学报（英文版）

摘　　要：本文对镓、镓－硼两种基区的３ＤＤ２０２型晶体管负阻摆幅现象进行了比较和理论分析，证明了基区表面杂质浓度分布对器件发射极－集电极电压负阻特性有较大影响．Abstract The characteristics of negative resistance of 3DD202 transistors have been studied. For comparison, two kinds of base region are formed by Ga or Ga B, respectively. It has been found that the negative resistance characteristic is strongly affected by the surface impurity profiles in the base region. A method to improve the reverse breakdown voltage is reported.

关 键 词：晶体管 表面杂质 浓度分布 负阻特性 

分 类 号：TN320.1[电子电信—物理电子学]