反向关态电流在热载流子蜕变效应研究中的应用  

Application of Off State Current in Reverse Mode in Hot Carrier Effect(HCE)

作　　者：张炯[1] 李瑞伟[1] 钱伟[1] 

机构地区：[1]清华大学微电子学研究所

出　　处：《Journal of Semiconductors》1998年第4期287-290,共4页半导体学报（英文版）

基　　金：国家"八五"和"九五"计划项目

摘　　要：本文研究了ｎＭＯＳＦＥＴ’ｓ器件的反向关态电流（Ｉｏｆｒ）特性．我们发现，刚受过热载流子应力的器件Ｉｏｆｒ呈现一个突然的增高，而在随后的一段时间里（我们定义其为弛豫时间）又呈指数下降，这一现象是由于在热载流子应力过程中注入的热空穴的消散造成的．所以我们认为Ｉｏｆｒ不但可以作为热空穴注入的有力证据，而且可以作为热空穴研究的有效手段．Abstract This paper presents research on the off state current in reverse mode( I offr ) of nMOSFET’s. The experimental results show that the I offr increases after hot carrier stress and falls exponentially afterwards. This is attributed to the diminution of the interface holes which had been ejected and trapped during hot carrier stress procedure. So, we conclude that I offr can serve as a novel and evident indicator of hot hole injection in nMOSFET’s. It can also be used as an effective method in studying hot hole effect.

关 键 词：IC NMOSFET 反向关态电流 热载子蜕效应 

分 类 号：TN432[电子电信—微电子学与固体电子学]