300mm直拉单晶硅中的氮元素对氧化诱生层错的影响  

Effects of Nitrogen on Oxidation-Induced Stacking Faults in 300 mm CZ Silicon

作　　者：韩海建[1] 周旗钢[1] 戴小林[1] 

机构地区：[1]北京有色金属研究总院有研半导体材料股份有限公司,北京100088

出　　处：《稀有金属》2009年第2期223-226,共4页Chinese Journal of Rare Metals

摘　　要：采用直拉法生长普通和掺氮硅单晶,研究不同含氮浓度的晶体中氧化诱生层错(OSF)的行为。从4组晶体的相同位置取样,并对样品进行1100℃湿氧氧化实验。实验结果表明,随着晶体中氮浓度的增加样品中氧化诱生层错环(OSF-ring)宽度变大,且环内OSF缺陷的密度增加。这说明,氮的掺入促进了晶体中满足OSF形核要求的原生氧沉淀的形成,使OSF形核区变大。The behavior of oxidation-induced stacking faults （OSF） in NCZ and CZ silicon single crystal was investigated. The samples were taken from the same position of four kinds of crystals and were oxidized in wet oxygen at 1100 ℃. It was found that the width of OSF-ring and the density of OSF in the four kinds of crystals increased with the rising of nitrogen concentration. It was suggested that the doped nitrogen could accelerate the formation of the nuclei of OSF and increase the area of OSF.

关 键 词：掺氮 300 MM 氧化诱生层错(OSF) 直拉单晶硅 

分 类 号：TN304.12[电子电信—物理电子学]