宽禁带半导体日盲紫外探测器研究进展  

Development of Solar-blind Ultraviolet Detectors Based on Wide Bandgap Semiconductors

作　　者：李长栋[1] 韩慧伶[2] 

机构地区：[1]中国人民解放军空军航空大学航空理论系飞行原理教研室,吉林长春130022 [2]中国人民解放军空军航空大学航空机械系飞机教研室,吉林长春130022

出　　处：《光机电信息》2009年第4期24-28,共5页OME Information

摘　　要：全固态日盲型紫外探测器具有体积小、功耗小和虚警率低等优点,在机载导弹预警方面具有广阔的应用前景。宽禁带半导体是这类探测器的首选材料,通过调节材料组分可以使响应波段落在日盲区。本文着重介绍以导弹预警为目的的宽禁带半导体紫外探测器的研究进展和前沿动态,分析了AlGaN、MgZnO等不同材料在制备和性能方面的优势和不足,并讨论了半导体日盲紫外探测器的发展方向。Solid state solar-blind ultraviolet （UV） detectors have attracted more and more interests due to the applications for airborne early-warning to missle. Compared to the other detection modes, solid state UV detection possessed of many advantages, such as small size, low power dissipation, and low false alarm rate. Semiconductors with wide bandgap were good candidates for these detectors. The development of AlGaN and MgZnO based solar-blind UV detectors was introduced in the paper. The characteristics of AlGaN and MgZnO on the fabrications and performances were analysed respectively. The future development of solar-blind UV detectors based on wide bandgap semiconductors was also discussed.

关 键 词：机载导弹预警 日盲紫外探测器 ALGAN MGZNO 

分 类 号：O434.22[机械工程—光学工程]