氨化Ga_2O_3/Nb膜制备的GaN纳米线的光学和微观结构特性的研究(英文)  

Optical and Micro-structural Properties of GaN Nanowires by Ammoniating Ga_2O_3/Nb Films

作　　者：庄惠照[1] 李保理[1] 王德晓 申加兵[1] 张士英[1] 薛成山[1] 

机构地区：[1]山东师范大学,山东济南250014

出　　处：《稀有金属材料与工程》2009年第4期565-569,共5页Rare Metal Materials and Engineering

基　　金：National Natural Science Foundation of China(Grant No90301002);Supported by the Key Research Program of the National Natural Science Foundation of China(Grant No 90201025)

摘　　要：采用射频磁控溅射技术在硅衬底上制备Ga2O3/Nb薄膜,然后在900°C下于流动的氨气中进行氨化制备GaN纳米线。用X射线衍射(XRD)、透射电子显微镜(TEM)和高分辨透射电子显微镜详细分析了GaN纳米线的结构和形貌。结果表明:采用此方法得到的GaN纳米线有直的形态和光滑的表面,其纳米线的直径大约50 nm,纳米线的长约几个微米。室温下以325 nm波长的光激发样品表面,只显示出一个位于367 nm的很强的紫外发光峰。最后,简单讨论了GaN纳米线的生长机制。Single-crystalline GaN nanowires have been synthesized on Si（111） substrates by magnetron sputtering through ammoniating the Ga2O3/Nb films at 900℃ in a quartz tube. The as-prepared nanowires are confirmed as single crystalline GaN with wurtzite structure by X-ray diffraction （XRD）, selected-area electron diffraction （SAED） and high-resolution transmission electron microscopy （HRTEM）. Transmission electron microscopy （TEM） shows that the GaN nanowires are straight and smooth, and possess the diameters of about 50 nm and lengths up to several microns. When excited by 325 nm helium-cadmium （He-Cd） laser light at room temperature, the GaN nanowires only have a strong ultraviolet luminescence peak located at 367 nm, owing to GaN band-edge emission. Finally, the growth mechanism of GaN nanowires is discussed briefly.

关 键 词：纳米线 氨化 GAN 

分 类 号：TB383.1[一般工业技术—材料科学与工程]