CMP抛光液流场数值仿真  

Numerical Simulation of Slurry Flow Field in Chemical Mechanical Polishing Process

作　　者：周兆忠[1,2] 楼飞燕[2] 吕冰海[3] 袁巨龙[2] 

机构地区：[1]浙江工业大学浙西分校,衢州324000 [2]浙江工业大学,杭州310014 [3]湖南大学国家高效磨削工程技术研究中心,长沙410082

出　　处：《中国机械工程》2009年第10期1207-1212,共6页China Mechanical Engineering

基　　金：国家自然科学基金资助项目(50475119;50535054);浙江省自然科学基金资助项目(Y104494;Y106590)

摘　　要：建立了一种基于流体动力学的化学机械抛光模型,利用流体动力学方法推导了抛光液流场的雷诺方程,并通过计算机求解偏微分方程,对抛光过程中晶片和抛光垫之间的抛光液液体薄膜厚度以及液体薄膜压力分布进行了仿真计算。分析了液膜厚度、晶片倾斜角和液膜负荷力、液膜压力力矩的关系,讨论了抛光载荷、抛光转速对最小液膜厚度、晶片倾斜角以及液膜压力分布的影响。结果表明,不同抛光速度和抛光载荷下,抛光液膜厚度、液膜压力和晶片倾斜角呈现不同的分布规律。比较仿真和实验中抛光输入参数对晶片下液膜厚度的影响曲线发现,仿真结果与实验结果的变化趋势一致,证明建立的抛光液液膜厚度及液膜压力分布模型的有效性。A new hydrodynamics based model for chemical mechamcal polishing was presented. In this model, a Reynolds equation for the slurry flow field was deduced,and the thickness and pressure distribution of slurry film between wafer and polishing pad in chemical and mechanical polishing （CMP） process was simulated by calculation of partial differential equations under different conditions. The effects of film thickness and wafer gradient on the film pressure were analyzed,and the in-fluence of the polishing load and speed on film pressure distribution was discussed. It is shown that the thickness and pressure distribution of slurry film vary with the wafer gradient, polishing load and speed,and show the same tendency with the experimental results. The mode developed herein can be taken as an effective tool to investigate the mechanism of the CMP process.

关 键 词：化学机械抛光 抛光液膜 流场 数值模拟 

分 类 号：TG702[金属学及工艺—刀具与模具]