Cu3N薄膜的制备与性能研究  

Studies on Preparation and Properties of Cu3N Thin Films

作　　者：崔增丽[1] 黄致信[1] 郭继花[1] 

机构地区：[1]华中师范大学物理科学与技术学院,湖北武汉430079

出　　处：《纳米科技》2009年第2期47-50,56,共5页

摘　　要：采用反应射频磁控溅射方法，在玻璃基底上成功制备出了氮化铜（Cu3N）薄膜，并研究了溅射参数对Cu3N薄膜的结构和性能的影响，结果显示，随着溅射功率和氮气分压的增加，氮化铜薄膜的择优取向由（111）方向向（100）方向改变。随着基底温度从70℃增加到200℃，薄膜从Cu3N相变为cu相。紫外可见光谱、四探针电阻仪等测试表明，当溅射功率从80W逐渐增加到120W时，薄膜的光学能隙从1．85eV减小到1．41eV，电阻率从1．45× 10^2Ω·cm增加到2．99× 10^3Ω·cm。Copper nitride （Cu3N） thin films were successfully deposited on glass substrates by reactive radio frequency magnetron sputtering. The effects of sputtering parameters on the structure and proper- ties of the films were studied. The results show that with the increase of RF power and nitrogen partial pressure, the preferential crystalline orientation changeds from （111） to （100）. With increase of sub- strate temperature from 70℃ to 200℃, the film changes from CuaN phase to Cu phase. With increasing sputtering power from 80W to 120W, the optical energy decreases from 1.85eV to 1.41eV, while the electrical resistivity increases from 1.45 × 10^2Ω·cm to 2.99 × 10^3Ω·cm, respectively.

关 键 词：氮化铜 溅射参数 物理性能 

分 类 号：O484[理学—固体物理]