大直径InP单晶生长研究  

Growth of Large Diameter InP Single Crystal

作　　者：周晓龙[1,2] 杨克武[1,2] 杨瑞霞[1] 孙同年[2] 孙聂枫[2] 

机构地区：[1]河北工业大学信息工程学院,天津300130 [2]专用集成电路国家重点实验室中国电子科技集团公司第十三研究所,石家庄050051

出　　处：《半导体技术》2009年第4期311-314,共4页Semiconductor Technology

摘　　要：生长高质量、大直径的单晶是当前InP晶体生长的发展方向,减少孪晶的产生一直是InP单晶生长技术的研究重点。通过对高压液封直拉法InP单晶生长过程中的几个重要因素包括加热器和保温系统、掺杂剂、坩埚和生长参数等的分析,设计了合适的热场系统和生长条件,有效地降低了孪晶产生的几率。在自己设计并制造的高压单晶炉内首先将In和P进行合成,然后采用后加热器加热、坩埚随动等技术重复生长了直径为100～142 mm的大直径InP单晶。讨论了关于避免孪晶产生的关键技术,所提到的条件都得到优化后,单晶率就会大幅上升。At present, high quality and large diameter InP single crystal growing is the main direction, how to reduce the twinning is the emphasis in the study of crystal growth of InP. Some key factors to growing InP single crystals by HP-LEC method were discussed, such as heater, heat-preservation system, dopant, crucible, growth parameters and so on. The probability of twinning occurring was reduced effectively by optimizing the thermal field system and the growth conditions, large diameter InP single crystals were grown by in-situ phosphorous injection synthesis and LEC method. Some techniques like auxiliary heater and crucible moving were used to improve the growing process. The diameter of the InP single crystal are 100 to 142 mm. The key technologies of reducing twining are discussed. The percentage of growing InP single crystals can be raised to some extent after optimizing the conditions mentioned.

关 键 词：磷化铟 直径 孪晶 热场 液封直拉 坩埚 单晶 

分 类 号：O731[理学—晶体学]