标准CMOS工艺U型Si LED器件发光分析  

Emitting Analysis of U Type Si LED Based on Standard CMOS Technology

作　　者：杨广华[1,2] 毛陆虹[2] 王伟[1] 黄春红[1] 郭维廉[2] 

机构地区：[1]天津工业大学信息与通信工程学院,天津300161 [2]天津大学电子信息工程学院,天津300072

出　　处：《半导体技术》2009年第5期411-413,422,共4页Semiconductor Technology

基　　金：国家自然科学基金资助课题(60536030,60706015);天津市应用基础及前沿技术研究计划重点项目(06YFJZJC00200,08JCZDJC24100)

摘　　要：描述了用于制备SiLED发光器件的Si材料的一些特性和Si发光器件的发光原理,分析了影响Si发光器件发光性能的主要因素。介绍了采用新加坡Charter公司的0.35μm标准CMOS工艺最新设计和制备的U型SiLED发光器件,设计和制备此U型器件主要目的是尽可能大的提高侧面发光效率。在对器件进行了电学和光学特性的测量后,得到了SiLED发光及实际版图的显微图形以及器件的正反向I-V特性和发光光谱。器件在室温下反向偏置,50mA电流下所得辐射亮度值为14.43nW,发光峰值在772nm处。The characteristics and emitting principle of Si materials and devices for fabricating Si LED were described, the factors which affect Si LED emitting were analyzed. A U type Si LED was designed and manufactured with Charter 0.35 μm standard CMOS technology in Singapore to improve the efficiency of Si LED side emitting. After the LED was tested, the micrographs of Si LED emitting and layout were obtained, and the Ⅰ-Ⅴ characteristic and spectra of Si LED were presented. At room temperature, the Si LED is reverse biased. Its radiant intensity is 14.43 nW at 50 mA and the emitting peak value is located at 772 nm.

关 键 词：硅发光二极管 CMOS标准工艺 侧面发光 辐射亮度 发光峰值 

分 类 号：TN256[电子电信—物理电子学] TN305