清洗刻蚀源的均匀性分析  

The Uniformity of Cleaning and Etching Ion Source

作　　者：朱昌[1] 王稳奇[1] 

机构地区：[1]西安工业大学光电工程学院,西安710032

出　　处：《西安工业大学学报》2009年第2期117-121,共5页Journal of Xi’an Technological University

基　　金：表面工程技术国防科技重点实验室(9140C540201060C54)

摘　　要：为了研制具有高性能的离子源,进而获得高质量的加工工艺,用自制的法拉第筒对清洗刻蚀源均匀性进行了测试,分析了影响离子束均匀性的主要因素,并采用清洗刻蚀离子源进行氩离子束刻蚀.实验结果表明:采用双圈发射型结构比采用单圈结构所得到的离子束密均匀性要好,在一定范围内减小阳极放电电压、减小出口束流、增大距源出口中心距离均可导致出口束密均匀性的提高,离子束刻蚀Cu膜表面粗糙度与离子束密空间分布均匀性紧密相关,目前可达到的最优表面粗糙度值为1.0678 nm.In order to develop the high-performance ion source, and then to gain the high-quality processing technology, using self-made Faraday cup, the uniformity of source is tested, the major factors for uniformity are studied,and the ion source is adopted to carry out the argon ion beam etching. The result indicates：The uniformity of ion beam density distribution is better in using dual-ring structure than that of single ring structure; The uniformity is improved by reducing the anode discharge voltage, the export of the beam and increasing the distance from the source of export center; Ion beam etching Cu film surface roughness and the ion beam density uniformity are closely related, and the optimal surface roughness reaches 1. 067 8 nm.

关 键 词：离子源 束流密度 均匀性 离子束刻蚀 表面粗糙度 

分 类 号：TN305.7[电子电信—物理电子学]