不同氮分压制备纳米复合Zr-Si-N薄膜的组织与性能研究(英文)  

Study on Microstructure and Properties of Zr-Si-N Films with Different Nitrogen Partial Pressures

作　　者：王剑锋[1] 马大衍[1] 宋忠孝[1] 唐武[2] 徐可为[1] 

机构地区：[1]西安交通大学金属强度国家重点实验室,陕西西安710049 [2]电子科技大学电子薄膜与集成器件国家重点实验室,四川成都610054

出　　处：《稀有金属材料与工程》2009年第5期753-756,共4页Rare Metal Materials and Engineering

基　　金：Supported by National Basic Research Program (973 program) (No. 2004CB619302);the National Natural Science Foundation of China (No. 50601020, 50601005);Applied Materials (Xi’an) Foundation (No. XA-AM-200617)

摘　　要：利用射频反应磁控溅射设备在不同N2分压下制备了Zr-Si-N纳米复合薄膜。研究了N2分压对薄膜组织和性能的影响。结果表明:随着N2分压的增加,薄膜中Zr、Si元素含量比降低,且薄膜方电阻增加;Zr–Si–N薄膜的微观组织由纳米晶ZrN嵌入SiNx非晶基体构成,在低N2分压条件下,有少量Zr2Si形成。Zr2Si的形成与低N反应活性相关。在0.03PaN2分压条件下,Zr-Si-N薄膜硬度达到22.5GPa的最大值。高N2分压制备薄膜硬度较低可能与Si原子造成的晶格畸变相关。Zr-Si-N films were prepared by radio frequency powered reactive magnetron sputtering at different N2 partial pressures. The influences of N2 partial pressure on the microstructure and properties of Zr-Si-N films were studied. The results reveal that the Zr/Si ratio decreases and the sheet resistance increases as the N2 partial pressure increases. The microstructures of Zr-Si-N films are composed of nano-crystallite ZrN embedded into amorphous matrix of SiNx phase and a small quantity of Zr2Si produced at low N2 partial pressure. The appearance of Zr2Si phase is related to the low nitridation level. The microhardness of Zr-Si-N film decreases with the increase of N2 partial pressure at the N2 partial pressure of 0.03 Pa, the microhardness of Zr-Si-N films is possessed of maximum value of about 22.5 GPa. The phenomenon that high N2 partial pressure results in low microhardness in Zr-Si-N films may be related to the lattice distortion induced by the addition of Si.

关 键 词：Zr-Si—N薄膜 磁控溅射 微观组织 性能 

分 类 号：TB383.2[一般工业技术—材料科学与工程]