单晶硅片化学机械抛光材料去除特性  

Material removal characteristic of silicon wafers in chemical mechanical polishing

作　　者：杜家熙[1] 苏建修[1] 万秀颖[1] 宁欣[1] 

机构地区：[1]河南科技学院机电学院,新乡453003

出　　处：《北京科技大学学报》2009年第5期608-611,617,共5页Journal of University of Science and Technology Beijing

基　　金：国家自然科学基金重大资助项目(No.50390061);河南科技学院高学历人才启动基金资助项目

摘　　要：根据化学机械抛光(CMP)过程中硅片表面材料的磨损行为,建立了硅片CMP时的材料去除率模型,设计了不同成分的抛光液并进行了材料去除率实验,得出了机械、化学及其交互作用所引起的材料去除率.结果表明,磨粒的机械作用是化学机械抛光中的主要机械作用,磨粒的机械作用与抛光液的化学作用交互引起的材料去除率是主要的材料去除率.A material removal rate （MRR） model of silicon wafers was built based on friction and abrasion behaviors in wafer chemical mechanical polishing （CMP）. Different slurries were designed for CMP tests of MRR. MRR results were obtained from the mechanical action of abrasives, the chemical action of slurry, and the interaction action between them. From the results it is concluded that the mechanical action produced by abrasives is the main mechanical action in wafer CMP process, and the MRR is mainly produced by the interaction between the mechanical action and the chemical action.

关 键 词：硅片 化学机械抛光 材料去除机理 材料去除率 磨损行为 

分 类 号：TN305.1[电子电信—物理电子学]