钕离子注入硅晶体的横向离散研究  

Measurement of the Lateral Spread of Nd Ions Implanted in Si Crystal

作　　者：秦希峰[1] 季燕菊[1] 王凤翔[1] 付刚[1] 赵优美[1] 

机构地区：[1]山东建筑大学理学院

出　　处：《临沂师范学院学报》2009年第3期38-41,共4页Journal of Linyi Teachers' College

基　　金：山东省中青年科学家科研奖励基金项目(2006BSB01447);山东建筑大学校内基金项目(XN070109)资助

摘　　要：利用离子注入技术掺杂制作光电子器件时,需要了解离子注入材料的射程分布、射程离散和横向离散.介绍了用400 keV能量的Nd离子分别垂直和倾斜60o角注入两块相同的Si晶体样品中,利用卢瑟福背散射技术研究了400 keV,5×1015 ions/cm2 Nd离子注入Si晶体的横向射程离散.测出的实验值和TRIM’98得到的理论模拟值进行了比较,发现实验值跟TRIM’98模拟计算的理论值能较好地符合.The projected range, the range straggling, and the lateral deviation of ions in materials should be known when photoelectron devices were made by ion implantation. Nd ions with the energy of 400 keV were implanted vertically and tilted at 60°angle respectively in two same Si crystal samples. The projected range and the lateral deviation for 400 keV,5×10^15 ions/cm^2 Nd ions implanted in Si crystal were studied by using Rutherford backscattering technique. The experimental results were and a good agreement was observed. compared with the theoretical values simulated by TRIM＇98,

关 键 词：离子注入 卢瑟福背散射技术 横向离散 

分 类 号：O471.4[理学—半导体物理]